Simulation of Rainfall Runoff Process Using HEC-HMS Model for Upper Godavari Basin Maharashtra, India


  •   Vaishnavi Kiran Patil

  •   Vidya R. Saraf

  •   Omkesh V. Karad

  •   Swapnil B. Ghodke

  •   Dnyanesvar Gore

  •   Shweta S. Dhekale


The Hydrologic Engineering Centers Hydrologic Modeling System (HEC-HMS) is a popularly used watershed model to simulate rainfall- runoff process. Hydrological modeling is a commonly used tool to estimate the basin’s hydrological response due to precipitation. It allows to predict the hydrologic response to various watershed management practices and to have a better understanding of the impacts of these practices. It is evident from the extensive review of the literature that the studies on comparative assessment of watershed models for hydrologic simulations are very much limited in developing countries including India. In this study, modified SCS Curve Number method is applied to determine loss model as a major component in rainfall-runoff modeling. The study of HEC-HMS model is used to simulate rainfallrunoff process in Nashik region (Upper Godavari basin), Maharashtra. To compute runoff volume, peak runoff rate, and flow routing methods SCS curve number, SCS unit hydrograph, Exponential recession and Muskingum routing methods are chosen, respectively. The results of the present study indicate that HEC-HMS tool applied to watershed proved to be useful in achieving the various objectives. The study confirmed a significant increase in runoff as a result of urbanization. It is a powerful tool for flood forecasting  Index

Keywords: HEC-HMS, SCS Curve No., Rainfall, Runoff


Anderson M. L., Z. Q. Chen, . Kavvas M. L, Arlen Feldman “Coupling HEC-HMS with Atmospheric Models For Prediction of Watershed Runoff” Journal of Hydrologic Engineering, Vol. 7, No. 4, Pp. 312-318, July1,Year 2013.

Chunale G. L.,. Gorantiwar S. D and Satpute G. U. “Event Based Rainfall- Runoff Simulation Using HECHMS Model for Small Agricultural Watershed” National Conference on Sustainable Water Resources development and Management (SWARDAM), 2013

De Silva M. M. G. T, Weerakoon S. B. and Herath Srikantha “ Modeling of Event and Continuous Flow Hydrographs with HEC–HMS: Case Study in the Kelani River Basin, Sri Lanka” Journal of Hydrologic Engineering, Vol. 19, No. 4, Pp800-806 April 1, 2014

Gandhi H. M., Dr. Shrimali N. J. and Patel M. M. “Literature Study On Application of HEC-HMS for Event and Continuous Based Hydrological Modeling” Vol 1, issue 11, Pp 2489-2491, 2014

Kumar D. and Bhattacharya R.“Distributed rainfall runoff modeling” International Journal of Earth Sciences and Engineering, Vol 4, issue 6, Pp 270-75,2011.

Mokhtari Fahimeh, Soltani Saeid, and Seyed Alireza Mousavi “Assessment of Flood Damage on Humans, Infrastructure, and Agriculture in the Ghamsar Watershed Using HEC-FIA Software” Nat. Hazards Rev.,Pp15276988, 2017 Steinman Alan, and Xuefeng Chu “Event and Continuous Hydrologic Modeling with HEC-HMS” Journal of Irrigation and Drainage Engineering, Vol. 135, No. 1, Pp1-119, February 1, 2009

Paul Jagadish Chandra, Choudhary Kishor and Panigrahi Balram “Simulation of rainfall-runoff process using HEC-HMS model for Balijore Nala watershed, Odisha, India” International Journal of Geomatics and Geosciences Volume 5 Issue 2, 2014

Putty M. R. Y., Prasad R “ Understanding Runoff Processes using a watershed model a case study in the Western Ghats in South India” Vol 228, issue 3-4, Pp 215-227, 13 March 2000.

Watkins W David., Gyawali Rabi, “Continuous Hydrologic Modeling of Snow Affected Watersheds In The Great Lakes Basin Using HEC-HMS” Journal of Hydrologic Engineering, Vol.18

Yener M.K. “Semi-Distributed Hydrologic Modelling Studies in Yuvacik Basin”, International Congress on River Basin Management, Vol 634, September, 2006.


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How to Cite
Patil, V., Saraf, V., Karad, O., Ghodke, S., Gore, D. and Dhekale, S. 2019. Simulation of Rainfall Runoff Process Using HEC-HMS Model for Upper Godavari Basin Maharashtra, India. European Journal of Engineering and Technology Research. 4, 4 (Apr. 2019), 102-107. DOI: